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Elimination of the light soaking effect and performance enhancement in perovskite solar cells using a fullerene derivative

机译:使用富勒烯衍生物消除钙钛矿型太阳能电池的均光效果和性能增强

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摘要

In this work, we investigate how electron extraction layers (EELs) with different dielectric constants affect the device performance and the light-soaking phenomenon in hybrid perovskite solar cells (HPSCs). Fulleropyrrolidine with a triethylene glycol monoethyl ether side chain (PTEG-1) having a dielectric constant of 5.9 is employed as an EEL in HPSCs. The commonly used fullerene derivative [60] PCBM, which has identical energy levels but a lower dielectric constant of 3.9, is used as a reference. The device using PTEG-1 as the EEL shows a negligible light soaking effect, with a power conversion efficiency (PCE) of 15.2% before light soaking and a minor increase to 15.7% after light soaking. In contrast, the device using [60] PCBM as the EEL shows severe light soaking, with the PCE improving from 3.8% to 11.7%. Photoluminescence spectroscopy and impedance spectroscopy measurements indicate that trap-assisted recombination at the interface between the hybrid perovskite and the EEL is the cause of the light soaking effect in HPSCs. The trap-assisted recombination is effectively suppressed at the perovskite/PTEG-1 interface, while severe trap assisted recombination takes place at the perovskite/[60] PCBM interface. We attributed these experimental findings to the fact that the higher dielectric constant of PTEG-1 helps to screen the recombination between the traps and free electrons. In addition, the electron donating side chains of PTEG-1 may also contribute to the passivation of the electron traps. As a consequence, the devices using PTEG-1 as the EEL display a considerable increase in the efficiency and a negligible light soaking effect.
机译:在这项工作中,我们研究了具有不同介电常数的电子提取层(EEL)如何影响混合性能的钙钛矿太阳能电池(HPSCs)的器件性能和吸光现象。在HPSC中,将具有介电常数为5.9的三乙二醇单乙醚侧链(PTEG-1)的全吡咯烷用作EEL。具有相同能级但较低的介电常数3.9的常用富勒烯衍生物[60] PCBM被用作参考。使用PTEG-1作为EEL的设备显示的光吸收效果微不足道,光吸收前的功率转换效率(PCE)为15.2%,光吸收后的功率转换效率(PCE)略有增加,达到15.7%。相反,使用[60] PCBM作为EEL的设备显示出严重的光浸透,PCE从3.8%提高到11.7%。光致发光光谱和阻抗光谱测量结果表明,在钙钛矿杂化体和EEL界面处的陷阱辅助复合是导致HPSC吸收光的原因。在钙钛矿/ PTEG-1界面有效地抑制了陷阱辅助的重组,而在钙钛矿/ [60] PCBM界面上发生了严重的陷阱辅助重组。我们将这些实验发现归因于以下事实:PTEG-1的较高介电常数有助于筛选陷阱和自由电子之间的复合。此外,PTEG-1的给电子侧链也可能有助于电子陷阱的钝化。结果,使用PTEG-1作为EEL的设备显示出效率的显着提高和光吸收效果可忽略不计。

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